Study and Simulation of EMC Phenomena in High-Frequency SiC/GaN Power Modules
Direction Mobilité et Systèmes

IFP Energies nouvelles (IFPEN) est un acteur majeur de la recherche et de la formation dans les domaines de l’énergie, du transport et de l’environnement. De la recherche à l’industrie, l’innovation technologique est au cœur de son action, articulée autour de quatre priorités stratégiques : CLIMAT, ENVIRONNEMENT ET ÉCONOMIE CIRCULAIRE, ÉNERGIES RENOUVELABLES, MOBILITÉ DURABLE et HYDROCARBURES RESPONSABLES.

L’engagement d’IFPEN en faveur d’un mix énergétique durable se traduit par des actions visant :

• à gagner en efficacité énergétique ;
• à réduire les émissions de CO2 et de polluants ;
• à améliorer l’empreinte environnementale de l’industrie et des transports ;

tout en répondant à la demande mondiale en mobilité, en énergie et en produits pour la chimie.

Dans cet objectif, IFPEN développe des solutions permettant, d’une part, d’utiliser des sources d’énergie alternatives et, d’autre part, d’améliorer les technologies existantes liées à l’exploitation des énergies fossiles.

Study and Simulation of EMC Phenomena in High-Frequency SiC/GaN Power Modules

With the development of power semiconductor devices based on wide-bandgap (WBG) materials, such as silicon carbide (SiC) and gallium nitride (GaN), the field of power electronics is undergoing a technological revolution. Their integration enables the design of more compact converters operating under higher temperature, switching frequency, and power constraints.

However, these devices introduce new electromagnetic compatibility (EMC) challenges due to their high switching frequencies and high dv/dt values, which are significantly greater than those observed with conventional silicon (Si) devices. Addressing these constraints at the converter design stage, through the simulation-based estimation of conducted and radiated electromagnetic emissions, can lead to significant time and cost savings by reducing the number of testing phases.

The objective of this internship is to gain a better understanding of the electromagnetic behavior of SiC/GaN devices and to develop modeling and simulation tools that contribute to the design of higher-performance power converters compliant with EMC requirements.

Internship Objectives:

• Review a literature review of EMC issues in WBG devices and SiC/GaN-based power electronics systems.
• Develop models of EMC phenomena in WBG-based power semiconductor devices.
• Verify and validate the models through simulation.
• Prepare a detailed internship report

Candidate profile:

Engineering or master’s students (M2) with strong knowledge in electrical engineering and power electronics.

• Proficiency in simulation tools (e.g., Matlab/Simulink, LTspice).
• Knowledge of EMC and signal processing is a plus.
• Knowledge of wide bandgap semiconductors (GaN, SiC).
• Proactive, dynamic, and collaborative.

Opportunities :

Potential continuation into a PhD project focused on experimentation and modeling of EMC in WBG power converters.

Keywords : Power Electronics, Electromagnetic Compatibility (EMC), WBG, SiC, GaN